Researchers at Germany’s Fraunhofer Institute for Solar Energy Systems (ISE) have demonstrated a p-type back junction (BJ) front/back‐contacted (FBC) crystalline silicon solar cell with a power conversion efficiency of 26.0% and a fill factor (FF) of 84.3%.
Presented in the study Design rules for high-efficiency both-sides-contacted silicon solar cells with balanced charge carrier transport and recombination losses, recently published in nature energy, the device demonstrates the high performance of the reported back junction solar cell design with a full-area p-n-junction at the back surface, according to the scientists. “Currently, we are working on commercial production technologies to realize such cells at low cost,” research co-author, Armin Richter, told pv magazine.
The cell was built with a full-area passivating contact based on Fraunhofer ISE’s TOPCon technology at the back surface and a highly transparent front surface based on dielectric passivation layers. Compared to conventional industrial cells with a front side p–n junction, the cell features a p–n junction at the back surface in the form of a full-area polycrystalline silicon-based passivating contact.
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