RIR Power Electronics Ltd has expanded its product portfolio with the introduction of silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs) designed for high-efficiency and high-reliability power applications.
SiC MOSFETs are widely used in power electronics systems, including electric vehicle (EV) onboard chargers and charging infrastructure, traction inverters, megawatt charging systems (MCS), solar inverters, energy storage systems, uninterruptible power supplies (UPS), power supplies, motor drives, and industrial equipment.
Alongside the MOSFETs, the company has also introduced merged-PiN Schottky (MPS) diodes designed for applications including electric vehicles, data centers and artificial intelligence (AI) infrastructure, renewable energy and grid systems, industrial drives, aerospace and defense systems, and green hydrogen and electrolysis technologies.
“With the addition of 1200V SiC MOSFET to our portfolio, we are advancing the accessibility and reliability of high-performance Silicon Carbide solutions for next-generation power applications,” said Harshad Mehta, non-executive chairman, RIR Power Electronics Ltd. “Backed by decades of expertise in high-power semiconductors, we empower designers globally to confidently unlock the full potential of SiC efficiently and at scale across demanding segments such as electric vehicles, data centres, renewable energy, and industrial systems.”
Supported by global development operations in the U.S. and its forthcoming first-of-its-kind SiC manufacturing campus in Odisha, India, RIR is building a vertically integrated SiC ecosystem spanning device design, wafer processing, packaging, and application support.
